反应刻蚀,reactive ion etching(RIE)
1)reactive ion etching(RIE)反应刻蚀
1.This work presents the study results of using inductively coupled plasma(ICP)-reactive ion etching(RIE) for fabricating InSb mesa with CH4/H2/Ar plasma.利用感应耦合等离子(ICP)反应刻蚀(RIE)进行了InSb阵列芯片台面刻蚀,并利用轮廓仪、SEM及XRD对台面形貌以及刻蚀损伤进行分析。
英文短句/例句
1.Inductively coupled plasma reactive ion etching of InSb photovoltaic detector arraysInSb阵列探测芯片的感应耦合等离子反应刻蚀研究
2.Tolerance of ion beam etching on multilayer dielectric thin film reflector for spectrum reshaping多层介质膜光谱调制反射镜的反应离子束刻蚀误差容限
3.An Investigation of Reactive Ion Etching for Through Silicon Via Packaging Technology反应离子刻蚀在穿透硅通孔封装技术中的应用研究
4.Etch- A process of chemical reactions or physical removal to rid the wafer of excess materials.蚀刻-通过化学反应或物理方法去除晶圆片的多余物质。
5.CIM Feedback Control System Design and Implement in Semiconductor Etch Area;半导体蚀刻计算机集成反馈控制系统设计与应用
6.Study on the electrode process kinetics of recycle of spent acidic etchant for printed circuit board印刷电路板酸性蚀刻废液回收工艺中电极反应过程动力学研究
7.RIE of SiO_2 Nanoparticles and Its Application in Preparation of Silicon Nanopillar Array二氧化硅纳米颗粒的反应离子刻蚀及其在硅纳米针尖制备中的应用(英文)
8.etchings, woodcuts, lithographs;蚀刻、木刻、平版画；
9.Investigation on Technics and Property of Broadband Infrared Antireflective Sub-wavelength Structures Prepared by RIE on Ge Substrate锗衬底上反应离子刻蚀制备宽波段红外增透结构的工艺及性能研究
10.The concern with etching beyond this point should be clear.刻蚀超越此值的后果应该是清楚的。
11.A STUDY OF THE PROPERTIES OF ECE RECOIL TRACKS INDUCED BY FAST NEUTRON IN POLYCARBONATE FOILS聚碳酸酯快中子反冲径迹的电化学蚀刻研究
12.The reaction of the audience was instantaneous.观众即刻有了反应。
13.gas discharge etching气体放电蚀刻[法]
14.laser engraving, laser etching激光雕刻，激光蚀刻
15.a block that has been etched or engraved.一块被蚀刻或雕刻的板。
16.APPLICATION OF ION BEAM MILLING TECHNIQUE TO JOSEPHSON DEVICE TECHNOLOGY离子束刻蚀技术在约瑟夫逊器件工艺中的应用
17.Investigation of Inductively Coupled Fluorocarbon Plasma and Etching of SiO_2;碳氟感应耦合等离子体及其SiO_2介质刻蚀研究
18.The Study of the Etching Process with RF Cold Plasma at Atmospheric-pressure;常压射频冷等离子体在刻蚀工艺中的应用研究
相关短句/例句
reactive ion etching反应离子刻蚀
1.Simulation of Reactive Ion Etching;反应离子刻蚀的计算机仿真
2.With electron beam lithography andreactive ion etching techniques we are able to produce graphite patterns of sizes down to 50 nm.首先,发现用聚焦离子束(镓离子)刻蚀高定向热解石墨,可以得到边缘整齐程度在几十纳米的石墨条,另外,用电子束曝光和反应离子刻蚀的工艺,可以得到最小尺寸为50nm的纳米石墨图型(nanosizedgraphitepattern,纳米尺寸的多层石墨结构)。
3.Areactive ion etching(RIE) cleaning the residual resist layer away by O_2 was presented in UV-imprint lithography.针对紫外(UV)压印光刻在压印工艺过程中会产生阻蚀胶残膜的技术特点,采用以O2为反应气体来清除阻蚀胶残膜的反应离子刻蚀(RIE)工艺方法,研究了不同的反应气体流量、反应腔室压力、射频功率等刻蚀参数对刻蚀速率和刻蚀各向异性的影响,得到了刻蚀速率和刻蚀各向异性随各刻蚀参数的变化趋势图。
3)RIE反应离子刻蚀
1.The Edge Effect in High PowerRIE and Compensatory Approach;反应离子刻蚀中的边缘效应及其补偿办法
2.Modeling for Charging Effect duringRIE Processing;反应离子刻蚀工艺中的充电效应
3.Surfaces topographies on Si wafer substrates with different dimesions have been produced by photolithography and reactive ion etching(RIE),and subsequently titanium dioxide films were coated on them via sol-gel method.采用光刻技术和反应离子刻蚀法(RIE)先在硅表面制备出一系列平面尺寸不同的微图形阵列,然后采用溶胶凝胶(sol-gel)浸渍提拉法在其表面制备出均匀致密、表面粗糙度一致的锐钛矿型纳米晶TiO2薄膜。
4)reactive shockwave反应激波刻蚀
1.In this paper,based on the focused of pulse ultrasound technology,reactive shockwave etching is presented which utilizes the highenergy transient pressure wave due to the non-linear propagation effects of which a shockwave generator produces series focused of pulse ultrasound of 1 MHz or so.提出基于脉冲超声波聚焦的反应激波刻蚀加工方法,采用大功率压电陶瓷激波发生器,在液体介质中产生聚焦脉冲超声波(频率1 MHz),由于传输过程中形成的非线性效应形成高能、瞬时压力激波,结合化学腐蚀方法,利用物理和声化学作用,使位于聚焦区域的材料迅速蚀除。
5)deep reactive ion etching深反应离子刻蚀
1.The rooting effect of the structure indeep reactive ion etching (DRIE) process was investigated.给出了加速度计的制作工艺流程,研究了解决深反应离子刻蚀过程中的过刻蚀现象的方法。
6)reactive ion beam etching (RIBE)反应离子束蚀刻
1.The silicon wafers were highly polished by reactive ion beam etching (RIBE) until surface micro-roughness was under 2 nm, and the hydrophilic glass and oxidized silicon wafer were dried and initially bonded in air for appropria.利用反应离子束蚀刻(RIBE)对基片进行抛光,使得键合表面达到2 nm级的表面粗糙度。
延伸阅读
离子束刻蚀（ion-beametching）离子束刻蚀（ion-beametching）离子束刻蚀，也称为离子铣，它的主要原理是当定向高能离子向固体靶撞击时，能量从入射离子转移到固体表面原子上，如果固体表面原子间结合能低于入射离子能量时，固体表面原子就会被移开或从表面上被除掉。通常离子束刻蚀所用的离子来自惰性气体。为了保证刻蚀的均匀性，离子束密度必须均匀并且应具有相同能量。此外，系统内的压力必须足够低，以防止离子束被散射。离子束刻蚀的机构决定了这种刻蚀有好的各向异性，又因为粒子尺寸是离子或原子量级的，因而这种刻蚀也具有较高的分辨率。这种技术的主要限制是刻蚀过程引起温升，这将使光刻胶很难除掉。
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